inchange semiconductor product specification silicon npn power transistors MJE13003 description ? ? with to-126 package ? high voltage ,high speed applications ? particularly suited for 115v and 220v switchmode applications such as switching regulators,inverters ,m otor controls,solenoid/ relay drivers and deflection circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 1.5 a i cm collector current-peak 3 a i b base current 0.75 a i bm base current-peak 1.5 a i e emitter current 2.25 a i em emitter current-peak 4.5 a t a =25 ?? 1.4 p d total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.12 ??/w
inchange semiconductor product specification 2 silicon npn power transistors MJE13003 characteristics tj=25 ?? unles otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =0.5a; i b =0.1a 0.5 v v cesat-2 collector-emitter saturation voltage i c =1a; i b =0.25a t c =100 ?? 1.0 1.0 v v cesat-3 collector-emitter saturation voltage i c =1.5a;i b =0.5a 3.0 v v besat-1 base-emitter saturation voltage i c =0.5a; i b =0.1a 1.0 v v besat-2 base-emitter saturation voltage i c =1a; i b =0.25a t c =100 ?? 1.2 1.1 v i cev collector cut-off current v cev =rated value; v be (off) =1.5v t c =100 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =9v; i c =0 1.0 ma h fe-1 dc current gain i c =0.5a ; v ce =2v 8 40 h fe-2 dc current gain i c =1a ; v ce =2v 5 25 f t transition frequency i c =0.1a ; v ce =10v;f=1mhz 4 mhz c ob collector outoput capacitance i e =0;f=0.1mhz ; v cb =10v 21 pf switching times resistive load t d delay time 0.05 0.1 | s t r rise time 0.5 1.0 | s t s storage time 2.0 4.0 | s t f fall time v cc =125v ,i c =1a i b1 =-i b2 =0.2a t p =25 | s duty cycle ? 1% 0.4 0.7 | s
inchange semiconductor product specification 3 silicon npn power transistors MJE13003 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors MJE13003
inchange semiconductor product specification 5 silicon npn power transistors MJE13003
|
